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2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
Features
* Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF * Compact and rugged construction offering weight and space savings * Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add " suffix to part number, see option below) T" * HPM (Hermetic Power Module) * Isolation voltage capability (in reference to the base) in excess of 3kV * Very low thermal resistance * Thermally matched construction provides excellent temperature and power cycling capability * Additional voltage ratings or terminations available upon request PART NUMBER Collector-to-Emitter Breakdown Voltage (Gate shorted to Emitter), @ Tj 25 C Collector-to-Gate Breakdown Voltage @ Tj 25 RGS= 1 C, M Gate-to-Emitter Voltage continuous transient Continuous Collector Current Tj = 25 C Tj= 90 C Peak Collector Current, pulsewidth limited by Tj max Power Dissipation Thermal resistance, junction to base per switch SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM PD R jc, max R , typ
MM118-XX SERIES
600 / 1200 Volts 150 Amps
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (IGBT) BRIDGE
MM118-06 600 V 600 V +/- 20 V +/- 30 V 60 A 32 A 120 A 165 W 0.75 C/W 0.5 C/W MM118-12 1200 V 1200 V +/- 20 V +/- 30 V 52 A 33 A 104 A 165 W 0.75 C/W 0.5 C/W
Maximum Ratings per switch @ 25 (unless otherwise specified) C
Mechanical Outline
Datasheet# MSC0321A
MM-XX SERIES
Maximum Ratings @ 25 (unless otherwise specified) - continued C
DESCRIPTION Short Circuit Reverse Current (RBSOA) @ Tj= 125 VCE= 0.8 x VCES C, Junction and Storage Temperature Range ( C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60 A 100 A MM118-12 66 A -55 to +150 50 A 100 A
Electrical Parameters, per switch @ 25 (unless otherwise specified) C
DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage SYMBOL BVCES VGE(th)
CONDITIONS
VGS = 0 V, IC = 250 A VCE = VGE, IC = 250 A VCE = VGE, IC = 2.5 mA VCE = VGE, IC = 350 A VGE = 20VDC, VCE = 0 VCE =0.8* CES BV VGE = 0 V VGE= 15V, IC= 30A IC= 60A IC= 30A IC= 30A VGE= 15V, IC= 25A IC= 50A IC= 25A VCE 10 V; IC = 30 A VCE 10 V; IC = 30 A
PART MM118-06 MM118-12 MM118-06F MM118-06L MM118-12 (ALL) (ALL) MM118-06F MM118-06F MM118-06F MM018-06L MM118-12 MM118-12 MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12
MIN 600 1200 2.5 4 4.5
TYP.
MAX
UNIT V
4 5.5
Gate-to-Emitter Leakage Current IGES Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) ICES VCE(sat)
TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 25 C TJ = 25 C TJ = 125 C
Forward Transconductance (1)
gfs
15 7 8.5
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Cies
VGE = 0 V, VCE = 25 V, f = 1 MHz
Coes
Cres
2.2 3.5 2.2 2.2 2.7 3.4 3.3 20 13 20 2500 2760 1650 230 240 250 70 51 110 25 60 75 30 130 65 3.6 175 400 420 125 400 45 1.3 5 2.4
5.0 7 6.5 100 200 200 1000 2.9 tbd tbd 2.5 3.2 tbd 3.9
V
nA A V
S
tbd tbd 2200 tbd tbd 380 tbd tbd 160 tbd tbd 110 tbd tbd 100 tbd tbd 560 175 tbd 60 -
pF
INDUCTIVE LOAD, Tj= 25 (2,3) C Turn-on Delay Time Rise Time
td(on)
tri On Energy Turn-off Delay Time Fall Time Off Energy tfi Eoff Eon td(off)
VGE = 15 V, L= 100 H note 2, 3 for MM118-06: VCE = 480 V, IC = 30 A, RG = 4.7 for MM118-12: VCE= 600 V, IC= 25 A, RG = 47
ns ns ns ns ns ns mJ ns ns ns ns ns ns mJ mJ mJ
Datasheet# MSC0321A
INDUCTIVE LOAD, Tj= 125 (2,3) C Turn-on Delay Time Rise Time
td(on)
tri On Energy Turn-off Delay Time Fall Time td(off) Off Energy tfi Eon
VGE = 15 V, L= 100 H note 2, 3 for MM118-06: VCE = 480 V, IC = 30 A, RG = 4.7 for MM118-12: VCE= 600 V, IC= 25 A, RG = 47
Eoff
Total Gate Charge Gate-to-Emitter Charge
Qg
VGE = 15 V, for MM118-06: VCE = 300V, IC= 30 A for MM118-12: VCE= 600 V, IC= 25 A
Qge Gate-to-Collector (Miller) Charge Qgc IE= 15 A TJ = 25 C IE= 30 A TJ = 25 C IE= 50 A TJ = 25 C IE= 15 A TJ = 150 C IE= 10 A TJ = 25 C IE= 10 A TJ = 100 C IE= 10 A, dIE/dt= 100 A/us, TJ= 25 C IE= 30 A, dIE/dt= 100 A/us, TJ= 25 C IE= 10 A, dIE/dt= 100 A/us, TJ= 25 C IE= 10 A, dIE/dt= 100 A/us, TJ= 125 C IE= 10 A, dIE/dt= 100 A/us, TJ= 25 C IE= 30 A, dIE/dt= 100 A/us, TJ= 25 C IE= 10 A, dIE/dt= 100 A/us, TJ= 25 C IE= 10 A, dIE/dt= 100 A/us, TJ= 125 C IE= 10 A, dIE/dt= 100 A/us, TJ= 25 C IE= 30 A, dIE/dt= 100 A/us, TJ= 25 C IE= 10 A, dIE/dt= 100 A/us, TJ= 25 C IE= 10 A, dIE/dt= 100 A/us, TJ= 125 C
Antiparallel diode forward voltage (1)
VF
Antiparallel diode reverse recovery time
trr
Antiparallel diode reverse recovery charge
Qrr
Antiparallel diode peak recovery current
IRM
MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06 MM118-06 MM118-06 MM118-06 MM118-12 MM118-12 MM118-06 MM118-06 MM118-12 MM118-12 MM118-06 MM118-06 MM118-12 MM118-12 MM118-06 MM118-06 MM118-12 MM118-12
25 60 95 35 130 90 1 4.2 10 250 540 420 260 600 45 4 12 4.2 125 110 160 23 34 20 50 47 75 1.7 1.9 2.4 2 140 60 160 320 tbd 800 3 4.2 tbd 22
tbd tbd tbd tbd tbd tbd tbd 1000 tbd tbd 1500 tbd 150 150 tbd 35 45 tbd 75 63 tbd 1.5 1.3 3 100 tbd -
ns ns ns ns ns ns mJ mJ mJ ns ns ns ns ns ns mJ mJ mJ nC
V
ns
nC
A
Notes
(1) (2) (3) (4) Pulse test, t 300 s, duty cycle 2% switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures. switching losses include "tail" losses Microsemi does not manufacture the igbt die; contact Microsemi for details.

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